Modeling of Ballistic Carbon Nanotube Transistors for Analog High-Frequency Applications

Modeling of Ballistic Carbon Nanotube Transistors for Analog High-Frequency Applications,  maj 2011 r. : Carbon nanotube field effect transistors (CNTFETs) are claimed tolikely replace MOSFETs in high-frequency front-end circuits such aspower and low-noise amplifiers. The one-dimensional transport and therelated low scattering rate of the charge carriers in CNTFETs promiselow noise, low power dissipation and high linearity. CNTFETs are thusideally suited for communication systems. Recent major advancestowards a production-type CNTFET process technology underline thisassumption. However, CNTFET simulation accuracy and capability arestill quite limited although they are crucial for gaining an understandingof high-frequency operation and for optimizing device design.This thesis aims to bridge the gap between currently available andupcoming necessity for simulation accuracy and capability. A physicsbaseddescription of ballistic transport phenomena in CNTFETs andsuitable analytical models support an intuitive understanding ofCNTFET behavior. An elaborated appendix has been added to give theinterested reader insight into the concepts of quantum theory neededin this thesis.